Semiconductor device manufacturing: process – Making passive device – Planar capacitor
Reexamination Certificate
2011-03-08
2011-03-08
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making passive device
Planar capacitor
C257S532000, C257SE21008
Reexamination Certificate
active
07902033
ABSTRACT:
An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrically tied to an associated electrode. The method also includes alternately depositing multiple layers of dielectric between the multiple layers of metal and coupling a bottom layer of the multiple layers of metal to a contact node in a top metal layer of the integrated circuit.
REFERENCES:
patent: 7067869 (2006-06-01), Cheng et al.
Hu Binghua
Lippitt, III Maxwell Walthour
Mercer Betty
Montgomery Scott
Williams Byron Lovell
Brady III Wade J.
Franz Warren L.
Montalvo Eva Yan
Pizarro Marcos D.
Telecky , Jr. Frederick J.
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