Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2005-04-26
2005-04-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S505000, C257S144000, C257S150000, C257S459000, C257S602000, C438S022000, C438S129000, C438S098000, C438S570000
Reexamination Certificate
active
06885079
ABSTRACT:
An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting the diffusion area. The electronic device further includes a conductive contact covering and contacting both the polysilicon layer and the diffusion area. Therefore, the semiconductor device disclosed in this invention includes poly-to-diffusion connection for a semiconductor device that has a diffusion are and a polysilicon area. The semiconductor device further includes a contact that covers both the diffusion area and the polysilicon area with a contact filling material forming the connection between these two areas.
REFERENCES:
patent: 5032880 (1991-07-01), Tsunoda
Bo-In Lin
Flynn Nathan J.
Wilson Scott R.
LandOfFree
Methods and configuration to simplify connections between... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods and configuration to simplify connections between..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and configuration to simplify connections between... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3390174