Methods and compositions for cleaning silicon wafers with a dyna

Details Methods and compositions for cleaning silicon wafers with a dyna Methods and compositions for cleaning silicon wafers with a dyna

1995-11-15

1997-02-18

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

216 93, 216109, 252 793, 252 794, 134 2, 134 3, C23G 100

Patent

active

056038496

ABSTRACT:
Methods and compositions are disclosed for cleaning oxides and metals from surfaces of silicon wafers in a two-phase liquid system. The two-phase system comprises a fluorine containing oxide etchant, such as hydrofluoric acid, that is soluble within two immiscible liquids of different densities such that the two liquids form separate layers. Silicon wafers are immersed into the top layer which is a nonpolar organic liquid. The bottom layer is polar liquid, preferably water. The nonpolar organic liquid includes ketones, ethers, alkanes and alkenes, but is preferably pentanone. Metal ions are transported from surfaces of the silicon wafers through the pentanone top layer to the polar water bottom layer, thereby eliminating metal ions from the pentanone. Due to relative solubilities, the concentration of hydrofluoric acid in the water bottom layer is greater than in the pentanone top layer. The differences in concentrations extend the lifetime of the system since the hydrofluoric acid in the water bottom layer is transported by equilibrium forces to the pentanone top layer as hydrofluoric acid is consumed cleaning oxides from the surfaces of the silicon wafers.

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