Methods and compositions for chemical mechanical...

Abrading – Abrading process – Glass or stone abrading

Reexamination Certificate

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C451S028000, C451S036000, C451S057000, C451S921000, C051S306000, C252S079100, C252S079200, C438S692000, C156S922000

Reexamination Certificate

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06869336

ABSTRACT:
Methods and compositions are provided for the chemical mechanical planarization of ruthenium. The method includes polishing the ruthenium layer using a low contact pressure and exposing the ruthenium layer to a planarization composition while polishing. The planarization composition comprises a dispersing medium and a plurality of abrasive particles. The method further includes removing the ruthenium of the ruthenium layer as a ruthenium hydroxide if the pH of the composition is in the range of from about 8 to about 12. The planarization composition may further comprise an oxidizing agent, with the ruthenium removed as a ruthenium hydroxide if the pH of the composition is in the range of from about 2 to about 14. The planarization composition may further comprise a complexing agent, with the ruthenium transformed into an ionic state and removed as a ruthenium complex if the pH of the composition is no greater than about 2.5.

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Oliver Chyan, et al., “Electrodeposition of Copper Thin Film on Ruthenium, A Potential Diffusion Barrier for Cu Interconnects”, Journal of the Electrochemical Society, vol. 150, No. 5 (2003).

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