Etching a substrate: processes – Nongaseous phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-01-27
2009-12-01
Alanko, Anita K (Department: 1792)
Etching a substrate: processes
Nongaseous phase etching of substrate
With measuring, testing, or inspecting
C216S086000, C216S088000, C438S005000, C438S010000, C438S013000, C438S014000, C438S017000, C438S692000, C451S005000, C451S041000
Reexamination Certificate
active
07625495
ABSTRACT:
Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The drag force parameter, for example, can be lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad. The drag force parameter can be measured along a lateral axis to produce a waveform having minimum and maximum peaks relative to minimum and maximum peak drag forces between the substrate assembly and the polishing pad along the axis. The maximum peak drag forces or the difference of the minimum and maximum peak drag forces are processed to generate a force-time relationship. The status of a parameter, such as the onset of planarity or the endpoint of the process, is then estimated by analyzing the force-time relationship.
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Hofmann Jim
Kramer Stephen J.
Moore Scott E.
Sabde Gundu M.
Alanko Anita K
Dorsey & Whitney LLP
Micro)n Technology, Inc.
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