Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2008-06-10
2010-06-29
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185240, C365S185280
Reexamination Certificate
active
07746691
ABSTRACT:
Methods and memory devices configured to utilize predicted coupling effects of neighboring memory cells in the programming of target memory cells can be utilized to tighten the distribution of threshold voltages for a given bit pattern by compensating for anticipated threshold voltage shift due to capacitive coupling, which can facilitate more discernable Vt ranges, and thus a higher number of bits of data per memory cell. Tightening the distribution of threshold voltages can further facilitate wider margins between Vt ranges, and thus an increased reliability in reading the correct data value of a memory cell.
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patent: 7535761 (2009-05-01), Park et al.
patent: 2006/0002190 (2006-01-01), Roohparvar
patent: 2006/0187712 (2006-08-01), Roohparvar
patent: 2007/0189073 (2007-08-01), Aritome
Roohparvar Frankie F.
Sarin Vishal
Ho Hoai V
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
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