Methods and apparatus to reduce growth formations on plated...

Details Methods and apparatus to reduce growth formations on plated... Methods and apparatus to reduce growth formations on plated...

2008-05-06

2008-05-06

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C438S106000, C438S124000, C257S666000, C257S677000, C257S734000, C257S735000, C257S736000, C257S766000, C257S692000, C257SE23053, C257SE23054, C257SE23031, C257SE23035

Reexamination Certificate

active

10855148

ABSTRACT:
A process includes annealing one or more plated conductive leads at a predetermined temperature. The one or more plated conductive leads are plated with one or more layers, where each layer comprises a material. The predetermined temperature is greater than or equal to approximately a melting point of one of the materials. The annealing can reduce growth formations, such as whiskers, on the one or more conductive leads. Lead frames and other devices having plated conductive leads may be subjected to the process, and the resultant plated conductive leads will have fewer growth formations than plated conductive leads not subjected to the process. The plated conductive leads may be trimmed and formed prior to or after the anneal.

REFERENCES:
patent: 5994767 (1999-11-01), Huang et al.
patent: 6194777 (2001-02-01), Abbott et al.
patent: 6646330 (2003-11-01), Kubara et al.
patent: 6713852 (2004-03-01), Abbott et al.
patent: 2002/0088845 (2002-07-01), Tanaka et al.
patent: 2004/0183166 (2004-09-01), Abbott

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