Methods and apparatus to bias the backgate of a power switch

Details Methods and apparatus to bias the backgate of a power switch Methods and apparatus to bias the backgate of a power switch

2007-04-10

2007-04-10

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S544000

Reexamination Certificate

active

10970601

ABSTRACT:
Methods and apparatus to bias a backgate of a power switch while preventing latchup are disclosed. A disclosed method of biasing a backgate of a power switch comprises: if a voltage of a first power supply rises before a voltage of a second power supply, initially biasing the backgate with a voltage based on the first power supply; and if the voltage of the first power supply rises after the voltage of the second power supply, biasing the backgate with a voltage based on the second power supply.

REFERENCES:
patent: 6252452 (2001-06-01), Hatori et al.
patent: 6518825 (2003-02-01), Miyazaki et al.
patent: 6624660 (2003-09-01), Li et al.
patent: 6970024 (2005-11-01), Reese et al.
Chun et al.,A PMOSFET ESD Failure Caused by Localized Charge Injection(date unknown).

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