Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2007-05-15
2010-10-12
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S415000, C257S690000, C257S698000
Reexamination Certificate
active
07812416
ABSTRACT:
Disclosed are methods for attaching an integrated circuit to a substrate, and in particular, a fused silica substrate, along with apparatus fabricated using the methods. Exemplary apparatus comprises a glass substrate, a metallic layer disposed on the substrate, and an integrated circuit eutectically bonded to the glass substrate via the metallic layer. The integrated circuit and fused silica substrate form part of a hermetic sensor. In an exemplary sensor, a first trench is formed in a first substrate. A second trench that is deeper than the first trench is formed in the first substrate. A first plurality of electrodes are formed in the first trench. An integrated circuit is attached to the first substrate within the second trench using a solder preform. The integrated circuit may be attached to the first substrate by depositing a Cr/Au film onto either the integrated circuit or first substrate, depositing a Cr/Ni/Au film onto either the first substrate or integrated circuit, placing the an Au/Sn solder preform onto the Cr/Ni/Au film, positioning the integrated circuit on top of the soldered preform so that it contacts the Cr/Au film, and heating the assembly.
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Au Bac H
Ballard Spahr LLP
CardioMEMS, Inc.
Picardat Kevin M
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