Methods and apparatus for thermal transfer with a semiconductor

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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118724, 118728, 156643, 156668, 165 805, 165 1, B44C 122, F28F 700, B29C 3700

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048327816

ABSTRACT:
Thermal transfer between a semiconductor wafer and a platen during vacuum processing is provided through a soft, thermally-conductive polymer layer having a thin, hard surface film. The soft polymer layer, which is preferably silicone rubber containing thermally-conductive particles, conforms to surface irregularities on the wafer and has low thermal resistance. The surface film is preferably silicon dioxide in the form of a multiplicity of flat plates integrally formed on the silicone rubber. Adherence of the wafer and of foreign matter to the polymer layer is prevented by the surface film. In addition, the underlying polymer layer is protected by the surface film. A high purity polymer layer is fabricated by evacuating the mold cavity and the resin container prior to injection of resin. The mold for the polymer layer utilizes a hard, smooth mold release surface and a resilient gasket between the platen and the mold release surface. The gasket establishes the dimensions of the polymer layer and seals the mold cavity. The surface film is formed by oxygen plasma treatment of the silicone rubber layer.

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G. M. Greenstein et al., "Heat Sinking Wafer Gripper," IBM Technical Disclosure Bulletin, vol. 20, No. 3, 8/77.

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