Methods and apparatus for ring oscillator based MOSFET gate...

Oscillators – Ring oscillators

Reexamination Certificate

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C331S049000, C324S762010, C324S658000

Reexamination Certificate

active

11197918

ABSTRACT:
An integrated circuit device is provided having a reference ring oscillator circuit having a plurality of stages. Each stage has a logic gate and electrically connecting to a first independent voltage source. The integrated circuit device also has at least one additional ring oscillator circuit having a plurality of stages. Each stage has a logic gate substantially identical to the logic gates of the reference ring oscillator circuit and electrically connecting to a respective at least one second independent voltage source. Each stage also has a FET load driven by the logic gate and electrically connecting to a third independent voltage source. A measured difference in capacitance between the reference ring oscillator circuit per stage and the at least one additional ring oscillator circuit per stage comprises a gate capacitance of a FET load.

REFERENCES:
patent: 6166607 (2000-12-01), Schoellkopf
patent: 7193427 (2007-03-01), Persun et al.
patent: 2003/0146771 (2003-08-01), Moore
patent: 2004/0100333 (2004-05-01), Mizuno et al.
patent: 2004/0100336 (2004-05-01), Christensen et al.
patent: 2005/0134394 (2005-06-01), Liu
Y. Taur et al., “Fundamentals of Modern VLSI Devices,” Cambridge University Press, pp. 68-78, 1998.
N.H.E. Weste et al., “Principles of CMOS VLSI Design,” A System Perspective, Second Edition, Chapter 4, Addison-Wesley Publishing Company, pp. 180-188, 1993.
R.J. Baker et al., “CMOS Circuit Design, Layout, and Simulation,” IEEE Press Series on Microelectronic Systems, pp. 84-87, 1998.

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