Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-04-19
2005-04-19
Sarkar, Asok Kumar (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C438S131000
Reexamination Certificate
active
06882027
ABSTRACT:
Methods and apparatus for providing an antifuse are disclosed, where the antifuse includes a semiconductor substrate having an active area circumscribed by a shallow trench isolation (STI) boundary; a gate conductor disposed above the semiconductor substrate and overlying at least a portion of the STI boundary; a dielectric disposed between the semiconductor substrate and the gate conductor; a first terminal coupled to the gate conductor; and a second terminal coupled to the semiconductor substrate, wherein a breakdown of the dielectric causes electrical connections between regions of the gate conductor and regions of the active area including substantially near the STI boundary.
REFERENCES:
patent: 6509624 (2003-01-01), Radens et al.
patent: 6683365 (2004-01-01), Trivedi
patent: 6713839 (2004-03-01), Madurawe
patent: 20020094611 (2002-07-01), Wu et al.
patent: 20030201514 (2003-10-01), Radens et al.
Brintzinger Axel
Radens Carl
Tonti William
Infineon - Technologies AG
International Business Machines - Corporation
Sarkar Asok Kumar
Slater & Matsil L.L.P.
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