Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2010-05-13
2011-11-15
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S423000, C438S455000, C438S473000, C257SE21317, C257SE21320, C257SE21561
Reexamination Certificate
active
08058148
ABSTRACT:
Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y-axial directions.
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Cherekdjian Sarko
Cites Jeffrey Scott
Couillard James Gregory
Maschmeyer Richard Orr
Moore Michael John
Chen Siwen
Corning Incorporated
Dernier Matthew
Lee Cheung
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