Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1998-11-19
2000-11-07
Utech, Benjamin L.
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117900, 65 173, 65 174, 65 71, 65144, 65302, C30B 1510
Patent
active
061430730
ABSTRACT:
Methods and apparatus for manufacturing silica crucibles 9 containing few, if any, white point defects. The white point defects are reduced by decreasing the amount of silica vapor condensing on electrodes 4,5,6 used in the manufacturing process. The silica vapor condensation is decreased by providing a flow of a protective or non-reactive gas or gas mixture through protective devices 11,12,13, over portions of the electrodes where the silica vapor would otherwise condense.
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Christman Marc A.
Mosier Robert O.
Champagne Donald L.
Heraeus Shin-Etsu America
Horton Kenneth E.
Utech Benjamin L.
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