Methods and apparatus for generating plasma, and semiconductor p

Coating apparatus – Gas or vapor deposition – With treating means

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118723ME, 118723MR, 156345, 31511121, 31511141, 333 99PL, 333251, 31323131, C23C 1630, H05H 146

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active

054337895

ABSTRACT:
A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

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patent: 5270616 (1993-12-01), Itatani

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