Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1991-12-13
1994-08-09
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 118723R, 21912136, 2191214, 31323131, 31511121, H01L 2100
Patent
active
053363558
ABSTRACT:
A reactor 10 having a vacuum housing 30 which encloses a plasma chamber 14 is used to perform local plasma assisted chemical etching on an etchable substrate 12. The chamber 14 is movable and is sized according to the removal material footprint desired. An rf driven electrode 22 and rf driven gas diffuser 22 have the same diameter as the chamber 14. The substrate 12 is mounted on a substrate holder 44 which also acts as the other electrode. The holder 44 is mounted on an X-Y positioning table 46. A reactive gas is flowed into the chamber with rf power so as to break the reactive gas into a plasma. The plasma chamber 14 which locally confines the plasma may be scanned over the substrate surface while the gap between the chamber and the substrate is varied to yield a desired etch profile.
REFERENCES:
patent: 4088926 (1978-05-01), Fletcher et al.
patent: 4461954 (1984-07-01), Inoue
patent: 4668366 (1987-05-01), Zarowin
patent: 4853250 (1989-08-01), Boulos et al.
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5000771 (1991-03-01), Fleming et al.
patent: 5144196 (1992-09-01), Gegenwart et al.
"A Theory of Plasma-Assisted Chemical Vapor Transport & Processes" J. Appl. Phys. 57(3), Feb. 1, 1985; Zarowin.
"Relation Between the RF Discharge Parameters & Plasma Etch Rates: Selectivity, & Anisotropy"; J. Vac. Sci. Technology A2(4), Oct.-Dec. 1984, pp. 1537-1549 Zarowin.
"Rapid, nonmechanical, damage--Free Figuring of Optical Surfaces using plasma-assisted chemical etching (PACE)"; Parts I-II SPIE vol. 966 Advances in Fabrication and Metrology for Optics and Large Optics (1988); pp. 82-97--Bollinger, et al.
"Predicted Polishing Behavior of Plasma Assisted Chemical Etching (PACE) from a Unified Model of the Temporal Evolution of Etched Surfaces"; SPIE vol. 966 in Fabrication & Metrology for Optics & Large Optics (1988) pp. 98-107, Gallatin, et al.
"Rapid, Non-Contact Damage Free Shaping of Optical & Other Surfaces w/Plasma Assisted Chemical Etching" Proceedings of the 43rd Annual Symposium on Frequency Control (1989); IEEE PG 623-626 Zarowin, et al.
"Unified Approach to the Temporal Evolution of Surface Profiles in Solid Etch & Deposition Processes"; J. Appl. Phys. 65(12), Jun. 15, 1989; pp. 5078-5088.
"Review of Precision Surface Generating Processes & their Potential Application to the Fabrication of Large Optical Components" SPIE vol. 966 (1988) Stowers, et al.
"Rapid, Non-Contact Optical Figuring of Asphoric Surfaces w/ Plasma Assisted Chemical Etching" (PACE); SPIE 1333 (1990).
"Rapid Optical Figuring of Aspherical Surfaces w/ Plasma Assisted Chemical Etching (PACE)"; SPIE vol. 1618; Large Optics II (1991); pp. 14-21; Bollinger, et al.
"A comparison using Surface Evolution Theory of the Smoothing and figuring of Optics by Plasma Assisted Chemical Etching & Ion Milling"; SPIE vol. 1618 Large Optics II (1991); pp. 22-27; Zarowin.
"Predicted Polishing of Plasma Assisted Chemical Etching" (PACE) From a Unified Model of the Temporal Evolution of Etched Surfaces SPIE vol. 966; pp. 98-107; Gallatin et al.
"Localized Plasma Etching For Device Optimization"; Larson et al.; J. Vac. Sci. 10(1); Feb. 1992; pp. 27-29 (1992).
Bollinger L. David
Zarowin Charles B.
Denson-Low W. K.
Goudreua George
Hearn Brian E.
Hughes Aircraft Company
Sales Michael W.
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