Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2005-01-11
2005-01-11
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000
Reexamination Certificate
active
06841406
ABSTRACT:
A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.
REFERENCES:
patent: 5536953 (1996-07-01), Dreifus et al.
patent: 5585957 (1996-12-01), Nakao et al.
patent: 5625634 (1997-04-01), Ukita et al.
patent: 5644156 (1997-07-01), Suzuki et al.
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5764672 (1998-06-01), Ukita et al.
patent: 5920409 (1999-07-01), Chadi et al.
patent: 6020602 (2000-02-01), Sugawara et al.
patent: 6120600 (2000-09-01), Edmond et al.
patent: 6177674 (2001-01-01), Rutt et al.
patent: 6198091 (2001-03-01), Forrest et al.
patent: 6221684 (2001-04-01), Sugawara et al.
patent: 6235548 (2001-05-01), Ota et al.
patent: 6297495 (2001-10-01), Bulovic et al.
Cao Xian-an
LeBoeuf Steven Francis
Stokes Edward Brittain
Walker Danielle Marie
Armstrong Teasdale
Pham Long
Trinh (Vikki) Hoa B.
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