Static information storage and retrieval – Floating gate – Disturbance control
Reexamination Certificate
2007-12-25
2007-12-25
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Disturbance control
C365S185250, C365S189020
Reexamination Certificate
active
11370368
ABSTRACT:
A non-volatile memory device includes a plurality of power control circuits interfaced via a single Y multiplexer with an array of memory cells. The multiple power control circuits provide multiple pre-charge paths configured to pre-charge the drain node of a target memory cell in the array, as well as the drain and/or source nodes of unselected memory cells in the array. The multiple pre-charge paths decrease the current through the array cells and also decrease the pre-charge and set up times for the array.
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Macronix International Co. Ltd.
Nguyen Tan T.
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