Methodology to quickly isolate functional failures associated wi

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324 731, G01R 3128, G06F 1100

Patent

active

055006035

ABSTRACT:
According to the present invention, the functionality and possible process-related defects of an integrated circuit device are quickly assessed and isolated using a special testing methodology. Utilizing a test chip, an Electron Beam (E-Beam) is used to locate defective circuitry of the integrated circuit at functional levels, and an emission microscope is used to locate possible DC leakage related to silicon which is indicative of process-related defects. Using the methodology of the present invention on a test chip rather than a real production device means that the functional analysis time may be reduced from weeks to less than one hour.

REFERENCES:
patent: 4053833 (1977-10-01), Malmberg et al.
patent: 5053699 (1991-10-01), Aton
patent: 5068605 (1991-11-01), Yasunga et al.
patent: 5208178 (1993-05-01), Usami

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