Methodology for improved semiconductor process monitoring using

Details Methodology for improved semiconductor process monitoring using Methodology for improved semiconductor process monitoring using

1998-04-22

2000-04-04

Font, Frank G.

Optics: measuring and testing

With plural diverse test or art

356311, 216 60, G01N 2162, G01N 3100

Patent

active

060467967

ABSTRACT:
In a semiconductor process which utilizes a plasma within a process tool chamber, a method of using optical emission spectroscopy (OES) to monitor a particular parameter of the process is disclosed. A first wavelength present in the plasma is determined which varies highly in intensity depending on the particular parameter by observing a statistically significant sample representing variations of the particular parameter. A second wavelength of chemical significance to the process is also determined which is relatively stable in intensity over time irrespective of variations of the particular parameter, also by observing a statistically significant sample representing variations of the particular parameter. These two wavelengths may be determined from test wafers and off-line physical measurements. Then, the intensity of the first and second wavelengths present in the plasma is measured on-line during normal processing within the process tool chamber, and the ratio between the first and second wavelength's respective intensities generates a numeric value which is correlated to the particular parameter. As an example, such a method may be used to generate a reliable alarm signal indicating the presence of etch stop conditions within a plasma oxide etcher, as well as to indicate the oxide etch rate.

REFERENCES:
patent: 4491499 (1985-01-01), Jerde et al.
patent: 5138149 (1992-08-01), Cadet et al.
patent: 5190614 (1993-03-01), Leach et al.
patent: 5208644 (1993-05-01), Litvak et al.
patent: 5308447 (1994-05-01), Lewis et al.
patent: 5347460 (1994-09-01), Gifford et al.
patent: 5414504 (1995-05-01), Litvak et al.
patent: 5546322 (1996-08-01), Gifford et al.
patent: 5694207 (1997-12-01), Hung et al.
patent: 5711849 (1998-01-01), Flamm et al.
patent: 5877032 (1999-03-01), Guinn et al.

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