Method with mechanically strained silicon for enhancing...

Details Method with mechanically strained silicon for enhancing... Method with mechanically strained silicon for enhancing...

2007-12-11

2007-12-11

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S457000

Reexamination Certificate

active

10982375

ABSTRACT:
A method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices is disclosed. The method with a mechanically strained silicon for enhancing the speeds of integrated circuits or devices includes the following steps: (a) providing a substrate, (b) fixing the substrate, (c) applying a stress upon the substrate, and (d) inducing a strain in one of a device and a circuit by stressing the substrate.

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Suhling et al.: “Silicon Piezoresistive Stress Sensors and Their Application In Electronic Packaging”, IEEE Sensors Jornal, vol. 1, No. 1, Jun. 2001, pp. 14-30.

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