Method with correction of hard mask pattern critical...

Details Method with correction of hard mask pattern critical... Method with correction of hard mask pattern critical...

2011-03-08

2011-03-08

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07901844

ABSTRACT:
A method for fabricating a photomask includes forming a light blocking layer, a hard mask layer, and a resist layer on a transparent substrate, forming a resist pattern to selectively expose the hard mask layer by removing the resist layer selectively, forming a hard mask pattern by etching the exposed hard mask layer using the resist pattern as an etch mask, exposing the hard mask pattern by removing the resist pattern; measuring a critical dimension of the exposed hard mask pattern, correcting the measured critical dimension of the hard mask pattern to correspond to a critical dimension of a target pattern, forming a light blocking pattern by etching the exposed light blocking layer using the corrected hard mask pattern as an etch mask, and removing the hard mask pattern.

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