Method using conductive atomic force microscopy to measure...

Details Method using conductive atomic force microscopy to measure... Method using conductive atomic force microscopy to measure...

2005-08-16

2005-08-16

Chaudhuri, Olik (Department: 2823)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

06930502

ABSTRACT:
A method for measuring current leakage of a contact of a semiconductor device formed on or in a substrate, includes scanning the contact with a probe of a conductive atomic force microscope; applying a DC voltage between the substrate and a conductive tip of the probe; and measuring a value of a current passing through the contact to the substrate, in response to the applied DC voltage.

REFERENCES:
patent: 5585734 (1996-12-01), Meuris et al.
patent: 6043672 (2000-03-01), Sugasawara
patent: 6147507 (2000-11-01), Shabde et al.
patent: 6313656 (2001-11-01), Schaffroth et al.
patent: 2003/0057988 (2003-03-01), Maeda et al.
B. El-Kareh, Introduction to VLSI Silicon Devices, pp. 93.

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