Method using cadmium-rich CdTe for lowering the metal vacancy co

Details Method using cadmium-rich CdTe for lowering the metal vacancy co Method using cadmium-rich CdTe for lowering the metal vacancy co

1994-11-21

1997-02-04

Thomas, Tom

Fishing, trapping, and vermin destroying

437 5, 437987, 437247, H01L 21225

Patent

active

055997333

ABSTRACT:
A hybrid focal plane array has p-n junction photodiodes formed in a substrate (10) of HgCdTe which is passivated by a cap layer (12) of Cd-rich CdTe. The active surface of the HgCdTe substrate is passivated by annealing at a temperature sufficient to support interdiffusion between the Cd-rich CdTe capping layer (12) and the HgCdTe substrate (10). Use of the CdTe capping layer (12) with a slight excess Cd maintains the surface of the HgCdTe substrate (10) in a metal-rich phase condition.

REFERENCES:
patent: 4927773 (1990-05-01), Jack et al.
patent: 4950615 (1990-08-01), Basol et al.

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