Method to selectively remove one side of a conductive bottom...

Details Method to selectively remove one side of a conductive bottom... Method to selectively remove one side of a conductive bottom...

2007-06-12

2007-06-12

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S391000

Reexamination Certificate

active

10340506

ABSTRACT:
The invention relates to a phase-change memory device. The device includes a lower electrode disposed in a recess of a first dielectric. The lower electrode comprises a first side and a second side. The first side communicates to a volume of phase-change memory material. The second side has a length that is less than the first side. Additionally, a second dielectric may overlie the lower electrode. The second dielectric has a shape that is substantially similar to the lower electrode.The present invention also relates to a method of making a phase-change memory device. The method includes providing a lower electrode material in a recess. The method also includes removing at least a portion of the second side.

REFERENCES:
patent: 5753547 (1998-05-01), Ying
patent: 5808855 (1998-09-01), Chan et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6147395 (2000-11-01), Gilgen
patent: 6337266 (2002-01-01), Zahorik
patent: 2004/0175857 (2004-09-01), Lowrey et al.
patent: 2003332530 (2003-11-01), None

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