Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-02-28
2006-02-28
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S005000
Reexamination Certificate
active
07005666
ABSTRACT:
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower section. The upper section extends beyond the first dielectric film. Resistivity in the upper section is higher than in the lower section. A second dielectric film is disposed over the first dielectric film and has an upper surface that is coplanar with the upper section at an upper surface.
REFERENCES:
patent: 2002/0045323 (2002-04-01), Lowrey et al.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C.., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Jeong, U.I., Jeong, H.S. and Kim, Kinam, “Completely CMOS-Compatible Phase-Change Nonvolatile RAM Using NMOS Cell Transistors,” presented at 2003 19thIEEE Non-Volatile Semiconductor Memory Workshop, Monterey, California, Feb. 26-20, 2003.
Ha, Y.H., Yi, J.H., Horii, H., Park, J.H., Joo, S.H., Park, S.O., Chung, U-In and Moon, J.T., “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Hwang, Y.N., Hong, J.S., Lee, S.H., Ahn, S.J., Jeong, G.T., Koh, G.H., Oh, J.H., Kim, H.J., Jeong, W.C., Lee, S.Y., Park, J.H., Ryoo, K.C., Horii, H., Ha, Y.H., Yi, J.H., Cho, W.Y., Kim, Y.T., Lee, K.H., Joo, S.H., Park, S.O., Chung, U.I., Jeong, H.S. and Kim, Kinam, “Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24 mm-CMOS Technologies,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Horii, H., Yi, J.H., Park, J.H., Ha, Y.H., Baek, I.G., Park, S.O., Hwang, Y.N., Lee, S.H., Kim, Y.T., Lee, K.H., Chung, U-In and Moon, J.T., “A Novel Cell Technology Using N-doped GeSbTe Films for Phase Change RAM,” presented at IEEE 2003 Symposium on VLSI Technology, Kyoto, Japan, Jun. 12-14, 2003.
Ovonyx Inc.
Picardat Kevin M.
Trop Pruner & Hu P.C.
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