Method to remove residue in wolfram CMP

Details Method to remove residue in wolfram CMP Method to remove residue in wolfram CMP

1999-05-27

2000-11-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 88, 438745, 438754, 438756, H01L 2100

Patent

active

061535265

ABSTRACT:
A new method for removing particle residue from the surface of semiconductor wafers that contain wolfram plugs. A series of polishing and buffing steps is performed; the first of this is a wolfram CMP using a hard polishing pad. An oxide buffing operation is further performed on the wafer surface; a soft pad is used for this buffing operation. The buffing operation is followed by a wolfram CMP that is applied for a short period of time using a soft polishing pad thereby removing the protruding top of the wolfram plug and the oxide particles from the vicinity of the wolfram plugs.

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