Method to reduce stress from trench structure on SOI wafer

Details Method to reduce stress from trench structure on SOI wafer Method to reduce stress from trench structure on SOI wafer

1993-12-14

1995-11-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, H01L 21302

Patent

active

054707811

ABSTRACT:
In an isolation trench in a silicon-on-insulator wafer, the sidewalls of the trench curve outwardly at the bottom of the trench where the top silicon layer meets the underlying oxide insulating layer. This sidewall geometry eliminates the sharp corner at the bottom of the trench. Preferably, the top edge of the trench wall is also curved.

REFERENCES:
patent: 4916086 (1990-04-01), Takahashi et al.
patent: 5084408 (1992-01-01), Baba et al.
patent: 5196373 (1993-03-01), Beasom
patent: 5236861 (1993-08-01), Otsu
patent: 5416041 (1995-05-01), Schwalke

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