Method to reduce leakage in a protection diode structure

Details Method to reduce leakage in a protection diode structure Method to reduce leakage in a protection diode structure

2011-08-16

2011-08-16

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C438S048000, C438S282000, C438S424000, C438S426000, C438S910000, C257SE21545

Reexamination Certificate

active

07998772

ABSTRACT:
A method for forming a protection diode utilizes processing operations and materials used in the formation of the CMOS integrated circuit device and provides a protection diode used in CMOS integrated circuit devices to direct charged particles to benign locations and prevent damage to the devices. The protection diode includes a well region of a first conductivity type formed in a surface of a semiconductor substrate, a heavily doped P-type impurity region disposed within the well region, a heavily doped N-type impurity region disposed within the well region and an STI structure interposed therebetween. A top surface of the STI structure extends above the surface. A silicide resistant block-out layer is formed over the STI structure and extends laterally beyond the STI structure, covering any counterdoped sections that may undesirably be formed in the substrate adjacent the STI structure during implantation operations.

REFERENCES:
patent: 5629544 (1997-05-01), Voldman et al.
patent: 6093593 (2000-07-01), Jang
patent: 6277723 (2001-08-01), Shih et al.
patent: 6291281 (2001-09-01), Wang et al.
patent: 6294448 (2001-09-01), Chang et al.
patent: 6507090 (2003-01-01), Hu et al.
patent: 2003/0205774 (2003-11-01), Hokazono
patent: 2004/0080883 (2004-04-01), Chatterjee et al.
patent: 2005/0106833 (2005-05-01), Oyamatsu et al.
VLSI Technology, 1983, p. 456, McGraw-Hill, U.S.
ULSI Technology, International Editions 1996, p. 396, The McGraw-Hill Companies, Inc., Singapore.

Affiliated with

Also associated with

Rating

Method to reduce leakage in a protection diode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to reduce leakage in a protection diode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to reduce leakage in a protection diode structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2783220