Method to reduce junction leakage current in strained...

Details Method to reduce junction leakage current in strained... Method to reduce junction leakage current in strained...

2005-01-14

2008-09-16

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S244000, C257S466000, C257S594000, C257SE21546

Reexamination Certificate

active

07425751

ABSTRACT:
A MOSFET device in strained silicon-on-SiGe and a method of forming the device are described. The said device achieves reduced junction leakage due to the lower band-gap values of SiGe. The method consists of forming isolation trenches in a composite strained-Si/SiGe substrate and growing a liner oxide by wet oxidation such that oxidation is selective to SiGe only, with negligible oxidation of silicon surfaces. Selective oxidation results in oxide encroachment under strained-Si, thereby reducing the junction area after device fabrication is completed. Reduced junction area leads to reduced n+/p or p+
junction leakage current.

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