Method to reduce emitter-base leakage current in bipolar transis

Details Method to reduce emitter-base leakage current in bipolar transis Method to reduce emitter-base leakage current in bipolar transis

1994-05-17

1995-10-03

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

257197, 257773, 257776, H01L 218222, H01L 29737

Patent

active

054554403

ABSTRACT:
Generally, and in one form of the invention, a method is disclosed for reducing base-to-emitter leakage in a bipolar transistor having an active region 22 bounded by an isolation implant boundary 24, said method comprising arranging an emitter contact 26 and a base contact 36 such that at a crossing of the contacts over the implant boundary, a leakage current between the contacts along the boundary is limited by a necessity to transit the thickness of a layer of material, and whereby said transistor exhibits improved gain, noise performance, and reliability.

REFERENCES:
patent: 4965650 (1990-10-01), Inada et al.
patent: 5016065 (1991-05-01), Seki et al.
patent: 5041882 (1991-08-01), Katoh
patent: 5064772 (1991-11-01), Jambotkar

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