Method to reduce boron diffusion through gate oxide using sidewa

Details Method to reduce boron diffusion through gate oxide using sidewa Method to reduce boron diffusion through gate oxide using sidewa

1999-01-26

2000-07-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438744, H01L 2100

Patent

active

060872683

ABSTRACT:
A gate electrode of a MOS transistor wherein gate oxide 12 is placed over substrate 10. Boron-doped polysilicon gate electrode 14 is placed over gate oxide 12. Optionally, drain extender implants may be added to substrate 10. Low-temperature-deposited nitride layer 18 is placed over gate electrode 14 and gate oxide 12. The structure then undergoes a sidewall spacer etch to form sidewall spacers 20.

REFERENCES:
patent: 5756216 (1998-05-01), Becker et al.
patent: 5965462 (1999-10-01), Tan et al.
patent: 6025255 (2000-02-01), Chen et al.

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