Method to radiation harden the buried oxide in silicon-on-insula

Details Method to radiation harden the buried oxide in silicon-on-insula Method to radiation harden the buried oxide in silicon-on-insula

1993-10-28

1994-11-01

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 24, 437 26, 437974, 437938, 437959, 437941, 148DIG12, H01L 2176

Patent

active

053607520

ABSTRACT:
A method of forming a radiation hardened SOI structure is disclosed. The buried oxide layer of an SOI structure is hardened prior to the bonding of a device wafer which forms the silicon portion of the silicon-on-insulator. The radiation hardening is done by implantation of recombination center-generating impurities. All the radiation hardening is done prior to the bonding of the device silicon layer and allows for radiation hardening of the buried oxide layer of an SOI structure without any damage to the silicon device layer.

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