Method to produce ultrathin porous silicon-oxide layer

Details Method to produce ultrathin porous silicon-oxide layer Method to produce ultrathin porous silicon-oxide layer

1997-03-18

1998-11-03

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272553, 4272554, 427264, 427270, 427271, 438408, 438700, 438770, C23C 1640

Patent

active

058305327

ABSTRACT:
A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period of time to form a thin oxide film 10 thereon. Then the conditions in the chamber are altered so that voids 14 of a desired dimension are formed in the oxide film 10. Alternatively, a substrate 20 is subjected to specific conditions in the vacuum chamber whereat oxide islands 22 nucleate on the surface. As the islands grow, they eventually cover most of the surface leaving voids 24 of the desired size.

REFERENCES:
patent: 4044222 (1977-08-01), Kestenbaum
patent: 5422305 (1995-06-01), Seabaugh et al.

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