Method to prevent the formation of a thinner portion of insulati

Details Method to prevent the formation of a thinner portion of insulati Method to prevent the formation of a thinner portion of insulati

1999-06-01

2000-06-06

Smith, Matthew

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438425, 438702, H01L 2176

Patent

active

060717947

ABSTRACT:
A method to prevent the formation of a thinner portion of insulating layer, especially a gate oxide layer, at the junction between the side walls and the bottom insulator is disclosed. First, a pad oxide layer is formed on the side walls and the bottom of the trench. Next, a bottom oxide is formed on the lower portion of the trench. Then, the upper portion of the bottom oxide and the exposed pad oxide layer are removed by wet etching to leave a bottom oxide having a concave surface. Next, the conformal gate oxide layer is grown on the exposed side walls of the trench.

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patent: 5911109 (1999-06-01), Razouk et al.

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