Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1997-09-15
1999-08-03
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
134 2, 134 26, 216 99, 438748, H01L 2100
Patent
active
059324937
ABSTRACT:
Formation of watermarks during semiconductor processing can be prevented by rinsing silicon wafers in an organic solvent prior to drying. Water droplets on the silicon wafer surface are taken up by the solvent and film is formed over the wafer surface. Following this rinse, the wafer may be subjected to standard IPA-based drying techniques.
REFERENCES:
patent: 4968381 (1990-11-01), Prigge et al.
patent: 5409544 (1995-04-01), Ota et al.
patent: 5520744 (1996-05-01), Fujikawa et al.
patent: 5593538 (1997-01-01), Davison et al.
A. Adamson; Surface Films On Liquid Substrates; Physical Chemistry of Surfaces; 4.sup.th Edition; pp. 104-107.
R. Hunter et al.; Emulsions; Foundation of Colloid Science; vol. 2, pp. 916-919.
A. Adamson; Emulsions And Foams; Physical Chemistry of Surfaces; 4.sup.th edition; pp. 474-477.
G. Gould et al.; An In Situ Study Of Aqueous HF Treatment Of Silicon By Contact Angle Measurement And Ellipsometry; J. Electrochem. Soc., vol. 135, No. 6, Jun. 1988 pp. 1535-1539.
Jin-Goo Park et al.; Effects Of Drying Methods And Wettability Of Silicon On The Formation Of Water Marks In Semiconductor Processing; J. Electrochem. Soc., vol. 142, No. 6, Jun. 1995 pp. 2028-2031.
Akatsu Hiroyuki
Hoyer Ronald
Ramachandran Ravikumar
International Business Machines Corporaiton
Neff Daryl K.
Powell William
LandOfFree
Method to minimize watermarks on silicon substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to minimize watermarks on silicon substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to minimize watermarks on silicon substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-849117