Method to manufacture metal gate of integrated circuits

Details Method to manufacture metal gate of integrated circuits Method to manufacture metal gate of integrated circuits

1998-07-09

2000-08-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

438595, 438591, 438588, 438303, H01L 213205

Patent

active

061071714

ABSTRACT:
The present invention discloses a method to manufacture metal gate of integrated circuits. A gate oxide layer is formed on a substrate and a polysilicon layer is then deposited on the gate oxide layer. Afterwards, a barrier layer is formed on the polysilicon layer and a metal layer is deposited on the barrier layer. An etching process is performed to etch the metal layer and the barrier layer, and a metal gate is defined. Then, silicon nitride liners are formed on the sidewalls of the metal gate. Finally, silicon nitride spacers are formed on the silicon nitride liners and on the sidewalls of the polysilicon gate to serve as an insulating layer.

REFERENCES:
patent: 5304504 (1994-04-01), Wei et al.
patent: 5679591 (1997-10-01), Lin et al.
patent: 5874353 (1999-02-01), Lin et al.
patent: 5888588 (1999-03-01), Nagabushnam et al.
patent: 5897349 (1999-04-01), Agnello

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