Method to manufacture LDMOS transistors with improved...

Details Method to manufacture LDMOS transistors with improved... Method to manufacture LDMOS transistors with improved...

2006-11-28

2006-11-28

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S306000, C438S305000

Reexamination Certificate

active

07141455

ABSTRACT:
A double diffused region (65), (75), (85) is formed in an epitaxial layer (20). The double diffused region is formed by first implanting light implant specie such as boron through an opening in a photoresist layer prior to a hard bake process. Subsequent to a hard bake process heavy implant specie such as arsenic can be implanted into the epitaxial layer. During subsequent processing such as LOCOS formation the double diffused region is formed. A dielectric layer (120) is formed on the epitaxial layer (20) and gate structures (130), (135) are formed over the dielectric layer (120).

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