Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Reexamination Certificate
2007-07-18
2010-11-23
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
C257SE21222
Reexamination Certificate
active
07838429
ABSTRACT:
A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.
REFERENCES:
patent: 6620659 (2003-09-01), Emmma et al.
patent: 6716746 (2004-04-01), Kim et al.
patent: 7214550 (2007-05-01), Phan et al.
patent: 2007/0128758 (2007-06-01), Tanaka et al.
Beach Eric William
Burks Karen Elizabeth
Flessner Kyle M.
Keramidas Michelle R.
Mollat Martin B.
Brady III Wade J.
Franz Warren L.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Vu David
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