Method to manufacture a thin film resistor

Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps

Reexamination Certificate

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C257SE21222

Reexamination Certificate

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07838429

ABSTRACT:
A method for manufacturing a semiconductor device that method comprises forming a thin film resistor by a process that includes depositing a resistive material layer on a semiconductor substrate. The process also includes depositing an insulating layer on the resistive material layer, and performing a first dry etch process on the insulating layer to form an insulative body. The process further includes performing a second dry etch process on the resistive material layer to form a resistive body. The resistive body and the insulative body have substantially identical perimeters.

REFERENCES:
patent: 6620659 (2003-09-01), Emmma et al.
patent: 6716746 (2004-04-01), Kim et al.
patent: 7214550 (2007-05-01), Phan et al.
patent: 2007/0128758 (2007-06-01), Tanaka et al.

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