Method to manufacture a phase change memory

Details Method to manufacture a phase change memory Method to manufacture a phase change memory

2008-01-01

2008-01-01

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S238000, C438S381000, C257SE31029

Reexamination Certificate

active

07314776

ABSTRACT:
Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method may further include forming a second electrode contacting the top surface of the phase change material.

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