Method to make electrical contact to a bonded face of a...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S785000, C438S073000, C438S092000, C438S064000, C438S462000, C257SE21599, C257SE21359, C257SE21088

Reexamination Certificate

active

07964431

ABSTRACT:
A photovoltaic cell is formed by bonding a donor body to a receiver element and cleaving a thin lamina from the donor body. Electrical contact is made to the bonded surface of the lamina through vias formed in the lamina. In some embodiments the emitter exists only at the bonded surface or only at the cleaved surface face; the emitter does not wrap through the vias between the surfaces. Wiring contacting each of the two surfaces is formed only at the cleaved face, and one set of wiring contacts the bonded surface through conductive material formed in the vias, insulated from the via sidewalls.

REFERENCES:
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patent: 2008/0070340 (2008-03-01), Borrelli et al.
patent: 2009/0197368 (2009-08-01), Sivaram et al.
Mitchell, Emily and Stefan Reber, “Emitter Wrap-Through Structure for Rear-Side Contacting of Epitaxial Thin-Film Solar Cells”, 33rd IEEE Photovolatic Specialists Conference. Proceedings, 2008.
Knauss et al., “Emitter Wrap Through Solar Cells Using Electroless Plating Metallisation”, 17th European Solar Energy Conference and Exhibition, 2001.
E. Van Kerschaver and G. Beaucanre, “Back-Contact Solar Cells: A Review”, Progress in Photovoltaics: Research and Applications 14(2), 2006, pp. 107-123.
Clement et al., Processing and Comprehensive Characterisation of Screen-Printed MC-Si Metal Wrap through (MWT) Solar Cell, 22nd European Photovoltaic Solar Energy Conference and Exhibition, 2007.
U.S. Appl. No. 12/026,530, filed Feb. 5, 2008 entitled “Method to Form a Photovoltaic Cell Comprising a Thin Lamina”.
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U.S. Appl. No. 12/403,187, filed Mar. 12, 2009 entitled “Back-Contact Photovoltaic Cell Comprising a Thin Lamina Having a Superstrate Receiver Element”.

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