Method to increase mechanical fracture robustness of porous...

Details Method to increase mechanical fracture robustness of porous... Method to increase mechanical fracture robustness of porous...

2008-03-11

2008-03-11

Malsawma, Lex (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S624000, C257SE21576

Reexamination Certificate

active

11114563

ABSTRACT:
The present invention provides an insulating layer100for an integrated circuit110comprising a porous silicon-based dielectric layer120located over a substrate130. The insulating layer comprises a densified layer140comprising an uppermost portion142of the porous silicon-based dielectric layer.

REFERENCES:
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patent: 6303192 (2001-10-01), Annapragada et al.
patent: 6465365 (2002-10-01), Annapragada
patent: 6593653 (2003-07-01), Sundararajan et al.
patent: 6787446 (2004-09-01), Enomoto et al.
patent: 2003/0111263 (2003-06-01), Fornof et al.
patent: 2005/0064699 (2005-03-01), Kondo et al.

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