Method to increase mechanical fracture robustness of porous...

Details Method to increase mechanical fracture robustness of porous... Method to increase mechanical fracture robustness of porous...

2008-03-11

2008-03-11

Malsawma, Lex (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S624000, C257SE21576

Reexamination Certificate

active

07342315

ABSTRACT:
The present invention provides an insulating layer100for an integrated circuit110comprising a porous silicon-based dielectric layer120located over a substrate130. The insulating layer comprises a densified layer140comprising an uppermost portion142of the porous silicon-based dielectric layer.

REFERENCES:
patent: 6107225 (2000-08-01), Shobu et al.
patent: 6303192 (2001-10-01), Annapragada et al.
patent: 6465365 (2002-10-01), Annapragada
patent: 6593653 (2003-07-01), Sundararajan et al.
patent: 6787446 (2004-09-01), Enomoto et al.
patent: 2003/0111263 (2003-06-01), Fornof et al.
patent: 2005/0064699 (2005-03-01), Kondo et al.

Affiliated with

Also associated with

Rating

Method to increase mechanical fracture robustness of porous... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to increase mechanical fracture robustness of porous..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to increase mechanical fracture robustness of porous... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2815411