Method to improve the short circuit current of the porous silico

Details Method to improve the short circuit current of the porous silico Method to improve the short circuit current of the porous silico

1998-03-13

2000-08-15

Fourson, George

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 73, 438466, 438705, 136261, H01L 3118

Patent

active

061035467

ABSTRACT:
The rapid thermal oxidation (RTO) and rapid thermal annealing(RTA) were used to improve the photo-current and photoresponsivity of porous silicon photodetector. In addition, we remove the surface oxide of the porous silicon under the metal grid using the same mask, and enhance the photo-current of porous silicon photodetector at zero bias voltage. This invention removes the limitation of application of the porous silicon photodetector.

REFERENCES:
patent: 5478757 (1995-12-01), Lee
patent: 5627081 (1997-05-01), Tsuo et al.

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