Method to improve post wafer etch cleaning process

Details Method to improve post wafer etch cleaning process Method to improve post wafer etch cleaning process

2005-08-16

2005-08-16

Gravini, Stephen (Department: 3749)

Drying and gas or vapor contact with solids

Process

Gas or vapor contact with treated material

C034S077000, C034S078000

Reexamination Certificate

active

06928748

ABSTRACT:
A method and apparatus for performing a semiconductor process wafer drying process, the method provides a semiconductor wafer having a process surface disposed in an enclosed drying space following exposure of the process surface to water; supplying a solvent vapor to the drying space at a predetermined concentration from a solvent vapor source and at least one solvent vapor supply line; determining at least one of a solvent vapor concentration and a solvent vapor temperature in the drying space; and heating in response to the determined solvent concentration at least one of at least a portion of one of the solvent vapor source, the at least one solvent vapor supply line, and at the drying space to alter the solvent vapor concentration in the drying space.

REFERENCES:
patent: 5580421 (1996-12-01), Hiatt et al.
patent: 6134807 (2000-10-01), Komino et al.
patent: 6158141 (2000-12-01), Asada et al.
patent: 6354311 (2002-03-01), Kimura et al.
patent: 6357142 (2002-03-01), Bergman et al.

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