Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-07-19
2011-07-19
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21022, C438S238000
Reexamination Certificate
active
07982286
ABSTRACT:
The invention, in one aspect, provides a method of manufacturing a semiconductor device. This method includes providing a semiconductor substrate and depositing a metal layer over the semiconductor substrate that has an overall thickness of about 1 micron or greater. The metal layer is formed by depositing a first portion of the thickness of the metal layer, which has a compressive or tensile stress associated therewith over the semiconductor substrate. A stress-compensating layer is deposited over the first portion, such that the stress-compensating layer imparts a stress to the first portion that is opposite to the compressive or tensile stress associated with the first portion. A second portion of the thickness of the metal layer is then deposited over the stress-compensating layer.
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The Patent Office of the People's Republic of China Examination Report dated Nov. 7, 2008 for related Chines Application No. 200710127028.1; 12 pages.
Rossi Nace
Singh Ranbir
Agere Systems Inc.
Jefferson Quovaunda
Smith Matthew
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