Etching a substrate: processes – Forming or treating article containing magnetically...
Reexamination Certificate
2007-09-18
2007-09-18
Norton, Nadine (Department: 1765)
Etching a substrate: processes
Forming or treating article containing magnetically...
C216S037000, C216S040000, C216S042000, C438S692000, C438S697000, C029S603060, C029S013000, C029S603140, C029S603180, C360S324100
Reexamination Certificate
active
11081222
ABSTRACT:
A method is presented for fabricating a read head having a read head sensor and a hard bias/lead layer which includes depositing a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material is deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias/lead material is then deposited on the regions of sensor material and fast-milling dielectric material to form first and second leads and a cap on each of these regions. The cap of hard bias/lead material and the masking material is then removed from each of these regions.
REFERENCES:
patent: 6085406 (2000-07-01), Garfunkel et al.
patent: 6176005 (2001-01-01), Garfunkel et al.
patent: 6958885 (2005-10-01), Chen et al.
patent: 2004/0105195 (2004-06-01), Fontana, Jr. et al.
patent: 2006/0067009 (2006-03-01), Cyrille et al.
IPCOM13530D: Fabrication of self-aligned side-by-side read/write head by using selective dry etching, no date.
Collier Hernandez Shawn Marie
Jayasekara Wipul Pemsiri
Minvielle Timothy J.
Wang Benjamin Lu chen
Zolla Howard Gordon
Angadei Maki
Guernsey Larry B.
Hitachi Global Storage Technologies - Netherlands B.V.
Intellectual Property Law Offices
Norton Nadine
LandOfFree
Method to improve ability to perform CMP-assisted liftoff... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to improve ability to perform CMP-assisted liftoff..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to improve ability to perform CMP-assisted liftoff... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3753999