Method to grow carbon thin films consisting entirely of...

Chemistry of inorganic compounds – Carbon or compound thereof – Elemental carbon

Reexamination Certificate

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C117S101000

Reexamination Certificate

active

07128889

ABSTRACT:
An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm.A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

REFERENCES:
patent: 5989511 (1999-11-01), Gruen et al.
patent: 6592839 (2003-07-01), Gruen et al.
patent: 6793849 (2004-09-01), Gruen et al.
patent: 6811612 (2004-11-01), Gruen et al.
The American Physical Society, Review B, vol. 65, Tight Binding Molecular Dynamics Simulation of Impurities in Ultrananocrystalline Diamond Grain Boundaries, ZOPOL, P., Sternberg M Curtiss L Frauenhiem T and Gruen D 2001-045403-1-11.

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