Method to getter contamination in semiconductor devices

Details Method to getter contamination in semiconductor devices Method to getter contamination in semiconductor devices

1991-10-22

1993-09-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 12, 148DIG24, 148DIG60, H01L 21308

Patent

active

052448193

ABSTRACT:
A frontside gettering method for removing metallic contamination from a thin film SOI or SOS silicon device. Damage sites are created by ion implantation into inactive regions of a silicon substrate. An annealing step causes metallic contamination to diffuse from the active device region to the inactive region. The inactive region material is removed prior to subsequent processing steps.

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