Method to form thick relaxed SiGe layer with trench structure

Details Method to form thick relaxed SiGe layer with trench structure Method to form thick relaxed SiGe layer with trench structure

2007-06-05

2007-06-05

Gupta, Yogendra N. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S004000, C117S088000, C117S095000, C117S097000, C117S930000, C117S936000

Reexamination Certificate

active

10062336

ABSTRACT:
A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium content of the SiGe layer is greater than 20%, by atomic ratio; implanting H+ ions into the SiGe layer at a dose of between about 1·1016cm−2to 5·1016cm−2, at an energy of between about 20 keV to 45 keV; patterning the SiGe layer with photoresist; plasma etching the structure to form trenches about regions; removing the photoresist; and thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes.

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